Improvement of Short-Circuit Current Density in GaInP Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes on p-type GaAs substrates grown by organometallic vapor phase epitaxy

Optical properties of GaInP/GaAs:Er,O/GaInP double heterostructure (DH) laser diodes (LDs) grown by organometallic vapor phase epitaxy (OMVPE) were investigated. The Er-doped LDs showed laser emission of the GaAs band-edge. The threshold current density (Jth) was 3.6 kA/cm on the n-type GaAs substrates and 15.8 kA/cm on the p-type at 77 K. The Er-doped LDs on the n-type substrate showed a stron...

Evolution of deep centers in GaN grown by hydride vapor phase epitaxy

Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Bas...

Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth p...

Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy

Scanning Kelvin probe microscopy is used to image surface potential variations in GaN ~0001! grown by hydride vapor phase epitaxy. The influence of finite probe tip size on these measurements is analyzed, suggesting that significant differences between measured and actual surface potential variations may exist. Experimentally, localized regions in which the surface work function increases by ;0...